Method and apparatus for calculating delay for logic circuit and

Data processing: structural design – modeling – simulation – and em – Simulating electronic device or electrical system – Timing

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703 14, 703 18, 716 6, G06F 1750

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060661771

ABSTRACT:
In a delay-power-source-coefficient determining step, a drain saturation current in a P-channel MOSFET is calculated on the basis of specified operating power-source voltage data and of saturation-current parameters such as the mobility of carriers and the thickness of a gate oxide film based on said specified operating power-source voltage data. Thereafter, a ratio of a drain saturation current in the P-channel MOSFET when a reference power-source voltage is applied thereto to the drain saturation current in the P-channel MOSFET when an operating power-source voltage is applied thereto, thereby determining a delay power-source coefficient. Next, in an effective-delay calculating step, effective-delay calculating means multiplies a delay time when the reference power-source voltage calculated by the delay calculating means is applied thereto by the delay power-source coefficient calculated by delay-power-source-coefficient determining means to determine a delay time at the operating power-source voltage.

REFERENCES:
patent: 5274568 (1993-12-01), Blinne et al.
patent: 5452225 (1995-09-01), Hammer
patent: 5600273 (1997-02-01), Hall et al.
patent: 5703798 (1997-12-01), Dhar

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