Method and apparatus for bonding and breaking leads to semicondu

Metal fusion bonding – Process – Using high frequency vibratory energy

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228 1, B23K 106

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039542173

ABSTRACT:
The second wire bond is made in a semiconductor circuit simultaneously with breaking of the wire, in such manner that a "tailless" wirebond is achieved in minimum time and with no damage to either the wire or the bonding pad. The bond is made ultrasonically, and tension is applied to the wire during the actual time that ultrasonic bonding energy is supplied to the bonding tool. Such tension is applied by a spring or its equivalent, and is so predetermined that application of the bonding energy to the bonding tool will not only create the ultrasonic bond but will also break the wire.

REFERENCES:
patent: 3087239 (1963-04-01), Clagett
patent: 3627192 (1971-12-01), Killingsworth

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