Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2008-02-04
2010-12-07
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S457000
Reexamination Certificate
active
07846813
ABSTRACT:
A method for forming bonded substrates includes providing a plurality of substrates, each of which having a top surface. A characteristic length for each of the plurality of substrates is determined by: determining a topographical profile of the top surface of the substrate from an interior portion to an edge portion along a radial direction, determining a highest point of the profile, and defining the characteristic length as a distance from the highest point to the edge portion. A first substrate and a second substrate are selected where at least one of the first or the second substrates has a characteristic length shorter than a predetermined length. The first substrate and the second substrate are brought into contact and form bonded substrates, with the top surface of the first substrate facing the top surface of the second substrate.
REFERENCES:
patent: 6583029 (2003-06-01), Abe et al.
patent: 6908027 (2005-06-01), Tolchinsky et al.
patent: 7161224 (2007-01-01), Tolchinsky et al.
Hook Tyler
Roy Donald
Sokolov Yuri V.
Chan Candice Y
Fairchild Semiconductor Corporation
Landau Matthew C
Townsend and Townsend / and Crew LLP
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