Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2003-12-17
2008-12-16
Ahmed, Shamim (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S706000, C438S710000, C216S058000, C216S067000
Reexamination Certificate
active
07465673
ABSTRACT:
A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O); forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute an NH3/O2, N2/H2/O2, N2/H2/CO, NH3/CO, or NH3/CO/O2based chemistry. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O).
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Balasubramaniam Vaidyanathan
Hagihara Masaaki
Higuchi Kimihiro
Igarashi Yoshiki
Inazawa Kouichiro
Ahmed Shamim
Tokyo Electron Limited
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