Oscillators – With frequency adjusting means – With voltage sensitive capacitor
Reexamination Certificate
2007-10-09
2007-10-09
Chang, Joseph (Department: 2817)
Oscillators
With frequency adjusting means
With voltage sensitive capacitor
C331S03600C
Reexamination Certificate
active
11070985
ABSTRACT:
A method and apparatus is presented for generating a reference voltage that biases a metal-oxide-semiconductor (MOS) transistor used as a varactor in capacitive tuning applications. In one embodiment, a biasing circuit is implemented. The biasing circuit comprises a diode-clamped FET and an element coupled to the diode-clamped FET at a connection point. The element produces a constant current through the diode-clamped FET. A voltage is produced at the connection point. The voltage is one gate overdrive plus a threshold voltage above ground or one gate overdrive plus a threshold voltage below VDD. Establishing a threshold voltage in this way enables the biasing circuit to track an ideal voltage of a varactor that is coupled to the biasing circuit through the threshold voltage.
REFERENCES:
patent: 6426854 (2002-07-01), Allen
patent: 2002/0014925 (2002-02-01), Ochiai
patent: 2003/0222698 (2003-12-01), Khieu et al.
patent: 2005/0030116 (2005-02-01), Takagi
Arave Kari Lee
Barnes Robert Keith
Cynkar Thomas Edward
Loke Alvin Leng Sun
Pfiester James Ruhl
Avago Technologies General IP Pte Ltd
Chang Joseph
LandOfFree
Method and apparatus for biasing a metal-oxide-semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for biasing a metal-oxide-semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for biasing a metal-oxide-semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3888081