Method and apparatus for avoiding undesirable deposits in crysta

Chemical apparatus and process disinfecting – deodorizing – preser – Chemical reactor – Including specific material of construction

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156617SP, 156DIG83, B01J 1700, C01B 3302

Patent

active

041166426

ABSTRACT:
In Czochralski crystal growing operations, particularly those involving growth of silicon crystals, projecting formations of silicon monoxide, which sometimes form on the surface of the melt-containing crucible just above the surface of the melt, are avoided by perturbing the formation conditions at the region of probable formation. Such perturbations may include increasing the temperature of the crucible at the region of probable formation. The increase in temperature may be provided by including an aperture in the housing which surrounds and supports the crucible to enable locally greater radiative heating of the crucible in the region of probable formation. Other expedients for locally increasing the temperature of the crucible include, without limitation, selective frosting and other techniques for locally changing the emissivity characteristics of the crucible and/or the surrounding material.

REFERENCES:
patent: 2956863 (1960-10-01), Goorissen
patent: 3002824 (1961-10-01), Francois
patent: 3261671 (1966-07-01), Jonge
patent: 3342559 (1967-09-01), Dermatis
patent: 3833342 (1974-09-01), Holliday

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