Method and apparatus for avoiding gated diode breakdown in...

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Amplitude control

Reexamination Certificate

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C327S316000, C327S332000

Reexamination Certificate

active

07132873

ABSTRACT:
An N-channel transistor protection circuit and method are disclosed that prevent gated diode breakdown in N-channel transistors that have a high voltage on their drain. The disclosed N-channel protection circuit may be switched in a high voltage mode between a high voltage level and a lower rail voltage. A high voltage conversion circuit prevents gated diode breakdown in N-channel transistors by dividing the high voltage across two N-channel transistors, MXU0and MXU1, such that no transistor exceeds the breakdown voltage, Vbreakdown. An intermediate voltage drives the top N-channel transistor, MXU0. The top N-channel transistor, MXU0, is gated with a voltage level that is at least one N-channel threshold, Vtn, below the high voltage level, Vep, using the intermediate voltage level, nprot. The drain voltage of MXU0will be at least one N-channel threshold, Vtn, lower than the input voltage level, nprot, and the drain voltage Vdof the bottom N-channel transistor, MXU1, is limited to less than the breakdown voltage, Vbreakdown.

REFERENCES:
patent: 4318040 (1982-03-01), Hilbourne
patent: 4868415 (1989-09-01), Dunn
patent: 4929855 (1990-05-01), Ezzeddine
patent: 5012123 (1991-04-01), Ayasli et al.
patent: 5576635 (1996-11-01), Partovi et al.
patent: 5696459 (1997-12-01), Neugebauer et al.
patent: 5809312 (1998-09-01), Ansel et al.

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