Optics: measuring and testing – By dispersed light spectroscopy – Utilizing a spectrometer
Patent
1984-08-17
1987-04-28
Willis, Davis L.
Optics: measuring and testing
By dispersed light spectroscopy
Utilizing a spectrometer
356345, 356355, G01B 902, G01B 1102
Patent
active
046609792
ABSTRACT:
An apparatus for automatically measuring the depth and rate of etching of a semiconductor body (10) comprises an interferometer (18) and a counter circuit (28). The interferometer (18) directs light towards the semiconductor body (10) and detects the intensity of the light reflected therefrom which varies periodically during etching. The counter circuit (28) is responsive to the periodically varying intensity of the reflected light and automatically determines the number of cycles and the frequency thereof to compute the etch depth and etch rate therefrom.
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Hopf, G., Kaus, G. and Kempf, J., "Optical Etch-Point Detection Using Chromatic Aberration," IBM Technical Disclosure Bulletin, vol. 26, No. 6, Nov. 1983, pp. 2780-2781.
Bayer, T., Elsner, G., Hinkel, H. and Kempf, J., "Interferometric Etch End-Point Detection for Two-Component Materials," IBM Technical Disclosure Bulletin, vol. 26, No. 2, Jul. 1983, pp. 688-689.
Greschner, J., Korth, H. E., Thiel, K. P. and Trumpp H., "Thin Film Monitor for in Situ Measuring of Silicon Etch Rates," IBM Technical Disclosure Bulletin, vol. 24, No. 9, Feb. 1982, pp. 4804-4805.
Manning, S. A. and Sherwood, E., "Algorithm for Etch End-Point Detection of Quartz Over Metal," IBM Technical Disclosure Bulletin, vol. 24, No. 12, May 1982, p. 6450.
AT&T - Technologies, Inc.
Levy R. B.
Turner S. A.
Willis Davis L.
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