Method and apparatus for analyzing failure of semiconductor wafe

Image analysis – Applications – Manufacturing or product inspection

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382147, 438 14, G06K 900, H01L 2166

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058287787

ABSTRACT:
If a first pattern defect is detected at the (n-2)th step, a pattern defect is retrieved at the (n-1)th step. It is decided that all pattern defects detected at the (n-1)th step in a predetermined region where the first pattern defect is detected are generated at the (n-2)th step. If second and third pattern defects are detected in other regions than the predetermined region, it is decided that the second and third pattern defects are generated at the (n-1)th step. Then, a pattern defect at the n-th step is retrieved. It is decided that all pattern defects detected at the n-th step in a predetermined region where the second and third pattern defects are detected at the (n-1)th step are generated at the (n-1)th step. If fourth, fifth and sixth pattern defects are detected in other regions than the predetermined region where the second and third pattern defects are detected, it is decided that the fourth, fifth and sixth pattern defects are generated at the n-th step.

REFERENCES:
patent: 3751647 (1973-08-01), Maeder et al.
patent: 5219765 (1993-06-01), Yoshida et al.
patent: 5240866 (1993-08-01), Friedman et al.

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