Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1993-11-16
1995-12-05
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
2504923, 2504921, G21K 504
Patent
active
054731658
ABSTRACT:
Methods and apparatus for thermally altering the near surface characteristics of a material are described. In particular, a repetitively pulsed ion beam system comprising a high energy pulsed power source and an ion beam generator are described which are capable of producing single species high voltage ion beams (0.25-2.5 MeV) at 1-1000 kW average power and over extended operating cycles (10.sup.8). Irradiating materials with such high energy, repetitively pulsed ion beams can yield surface treatments including localized high temperature anneals to melting, both followed by rapid thermal quenching to ambient temperatures to achieve both novel and heretofore commercially unachievable physical characteristics in a near surface layer of material.
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Harjes, H. C. et al, "Status Of the Repetitive High Energy Pulsed Power Project," Digest of Technical Papers, Proceedings 8th IEEE International Pulsed Power Conference, pp. 543-548, San Diego, Calif., Jun. 1991.
Greenly, J. B. et al, "Plasma-Anode Ion Diode Research At Cornell: Repetitive-Pulse, and 0.1 TW Single-Pulse Experiments," Proceedings 8th International Conf. on High-Power Particle Beams, pp. 199-206, Novosibirsk, USSR, Jul. 1990.
Stinnett, R. W. et al, "Surface Treatment With Pulsed Ion Beams," Division of Plasma Physics, Seattle, Wash., Nov. 1992.
Greenly John B.
Stinnett Regan W.
Berman Jack I.
Beyer James
Cone Gregory A.
Stanley Timothy D.
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