Method and apparatus for AlGan vapor phase growth

Details Method and apparatus for AlGan vapor phase growth Method and apparatus for AlGan vapor phase growth

2005-08-26

2009-11-24

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S094000, C117S095000, C117S104000

Reexamination Certificate

active

07621999

ABSTRACT:
An epitaxial growing method in which a crystal of AlxGa1-xN wherein x is a desirable constituent ratio can be grown on an Si substrate or sapphire substrate according to the HVPE process. Crystal of AlxGa1-xN is grown according to the HVPE process in which use is made of an aluminum material, a gallium material, an ammonia material and a carrier gas. The carrier gas consists of an inert gas and hydrogen, and the partial pressure of hydrogen is set so as to range from 0 to <0.1. As a result, the relationship between feeding ratio among materials and constituent ratio of grown crystal can be made linear, thereby enhancing the controllability of crystal composition.

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U.S. Appl. No. 10/509,177, filed Sep. 27, 2004, Akinori Koukitsu et al.

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