Method and apparatus for adjusting the threshold of a CMOS...

Details Method and apparatus for adjusting the threshold of a CMOS... Method and apparatus for adjusting the threshold of a CMOS...

2001-12-17

2004-09-21

Luu, Thanh X. (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S370070

Reexamination Certificate

active

06794630

ABSTRACT:

BACKGROUND
This invention relates to a CMOS radiation-measuring circuit with a variable threshold.
A complementary-symmetry MOSFET (CMOS) radiation-measuring circuit may include transistors configured to provide a digital output that changes from one state to another when the radiation dose absorbed by the circuit exceeds a threshold. The size of the devices used in the CMOS radiation-measuring circuit determines the radiation dosage that will cause the digital output of the CMOS radiation-measuring circuit to change from one digital state to another digital state. Hence, the design of a CMOS radiation-measuring circuit requires careful consideration of the size of transistors in the circuit.
When the voltage applied between the gate and source terminals of a MOSFET exceeds a certain voltage, the MOSFET turns on. This voltage is referred to as the threshold voltage. The threshold voltages of p-channel type MOSFET (PMOS) and n-channel type MOSFET (nMOS) devices are sensitive to ionizing radiation. Generally, the threshold voltage of an irradiated MOSFET device shifts due to an increase of trapped charge in the oxide and interface states.


REFERENCES:
patent: 5105078 (1992-04-01), Nochise et al.
patent: 5694448 (1997-12-01), Morcom
patent: 6141243 (2000-10-01), Aslam et al.
patent: 6388494 (2002-05-01), Kindt et al.
patent: 6404269 (2002-06-01), Voldman
patent: 2001/0019285 (2001-09-01), Lin et al.

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