Method and apparatus for accessing a phase-change memory

Details Method and apparatus for accessing a phase-change memory Method and apparatus for accessing a phase-change memory

2007-12-05

2010-10-19

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S163000, C365S100000, C365S148000, C365S189090, C365S185240

Reexamination Certificate

active

07817475

ABSTRACT:
Fixed-voltage programming pulses are employed to program a phase change memory cell. A burst of incrementally widening fixed-voltage programming pulses may be employed to program a phase change memory to a target threshold voltage.

REFERENCES:
patent: 7630263 (2009-12-01), Pio
patent: 2006/0164898 (2006-07-01), Pio

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