Method and apparatus for a low noise JFET device on a...

Details Method and apparatus for a low noise JFET device on a... Method and apparatus for a low noise JFET device on a...

2008-05-27

2008-05-27

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S272000, C257S274000, C257SE29265

Reexamination Certificate

active

11618598

ABSTRACT:
A microelectric product and the method for manufacturing the product are provided. A source and drain are spaced from one another in a first direction and are connected to opposing ends of a channel to provide a set voltage. First and second gates are spaced from one another in a second direction surrounding a portion of the channel to allow for application and removal of a gate voltage. Application of the gate voltage repels majority carriers in the channel to reduce the current that conducts between the source and drain.

REFERENCES:
patent: 3999207 (1976-12-01), Arai

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