Method and apparatus for a CMOS image sensor with a distributed

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

348308, H01L 2700, H04N 5335

Patent

active

061304239

ABSTRACT:
A CMOS image sensor circuit having a distributed amplifier is disclosed. The CMOS image sensor circuit is constructed using a photo sensor that converts light intensity to into voltage, a reset transistor to charge the photo sensor, and a distributed amplifier to detect and read out the voltage value created by the photo sensor. The distributed amplifier is distributed in the sense that portions of the amplifier circuitry reside within individual pixel circuits that form a CMOS image sensor array. The remainder of the amplifier resides in a column read out circuit that is at the bottom of the CMOS image sensor array.

REFERENCES:
patent: 5461425 (1995-10-01), Fowler et al.
patent: 5471515 (1995-11-01), Fossum et al.
patent: 5548773 (1996-08-01), Kemeny et al.
patent: 5665959 (1997-09-01), Fossum et al.
patent: 5780884 (1998-07-01), Kumagai et al.
patent: 5841125 (1999-11-01), Fossum et al.
patent: 5841126 (1999-11-01), Guerrieri et al.
patent: 5850195 (1998-12-01), Berlien et al.
patent: 5861645 (1999-01-01), Kudo et al.
patent: 5869857 (1999-02-01), Chen
patent: 5880691 (1999-03-01), Fossum et al.
patent: 5886659 (1999-03-01), Pain et al.
patent: 5923369 (1999-07-01), Merrill et al.
patent: 5949483 (1999-05-01), Fossum et al.
patent: 5965871 (1999-10-01), Zhou et al.
patent: 5969758 (1999-10-01), Sauer et al.
patent: 5981932 (1999-09-01), Fossum et al.
patent: 5990506 (1999-11-01), Fossum et al.
patent: 5995163 (1999-11-01), Fossum et al.
Peter J. W. Noble, Self-Scanned Silicon Image Detector Arrays, IEEETransactions on Electron Devices, vol. Ed-15, No. 4, Apr. 1968, pp. 202-209.
Savvas G. Chamberlain, Photosensitivity and Scanning of Silicon Image Detector Arrays, IEEE Journal of Solid-State Circuits, Dec. 1969, pp. 333-342.
Masakazu Aoki, et al., Session II: Advances in CCD and Imaging, ISSCC80/Wednesday, Fed. 13, 1980, IEEE International Solid-State Circuits Conference.
Shinya Ohba, et al.,Vertical Smear Noise Model for an MOS-Type Color Imager,IEEE Transactions on Electron Devices, vol.Ed-32, No. 8, Aug. 19, 1985, pp. 1407-1410.
John E. Tanner, A High Speed Video Camera and Recorder, SPIE vol. 115 Ultrahigh Speed and High Speed Photogaphy, Photonics and Videography 1989, pp. 94-103.
D. Renshaw, et al., ASIC Vision, IEEE1990 Custom Integrated Circuits Conference, pp. 7.3.1-7.3.4.
D. Renshaw, et al., ASIC Image Sensors, 1990 IEEE, pp. 3038-3041.
P.B. Denyer, CMOS Image Sensors for Multimedia Applications, IEEE 1993 Custom Integrated Circuits Conference, pp. 11.5.1-11.5.4.
Orly Yadid-Pecht, et al., A Random Access Photodiode Array for Intelligent Image Capture, IEEE Transactions on Electron Devices. vol. 38. No. 8, Aug. 1991, pp. 1772-1780
Fumihiko Andoh, et al., Session 13: Image Sensors, Processors, and Displays, ISSCC90/Friday, Feb. 16, 1990 IEEE International solid-State Circuits Conference, pp. 212-213.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for a CMOS image sensor with a distributed does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for a CMOS image sensor with a distributed , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for a CMOS image sensor with a distributed will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2258425

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.