Optics: measuring and testing – By polarized light examination – With light attenuation
Patent
1996-10-02
1998-05-26
Pham, Hoa Q.
Optics: measuring and testing
By polarized light examination
With light attenuation
356381, 356 73, G01B 1106
Patent
active
057575029
ABSTRACT:
A system for film thickness sample assisted surface profilometry. The sample assisted surface profilometry system of the present invention is utilized to determine an absolute topography variation of a surface of a layer of an integrated circuit with respect to the surface of an underlying layer of known height orientation. The present invention is comprised of a thickness measurement tool for measuring a thickness of the layer at sample points. The thickness measurement tool measures a thickness sample, wherein the thickness sample characterizes the thickness of the layer over the known layer. A surface profilometry tool is coupled to the thickness measurement tool to receive the thickness measurements of the sample points. The surface profilometry tool is utilized to measure relative topography variations of the surface of the layer. The surface profilometry tool then determines absolute height variations of the surface of the layer based on the absolute height reference plane and relative height variations. This information is used to determine a maximum absolute height variation of the topography of the surface of the layer.
REFERENCES:
patent: 4900940 (1990-02-01), Nakamura
patent: 5351126 (1994-09-01), Takada et al.
patent: 5398113 (1995-03-01), de Groot
Pham Hoa Q.
VLSI Technology Inc.
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