Method and a device for oxidation of a semiconductor layer of SI

Details Method and a device for oxidation of a semiconductor layer of SI Method and a device for oxidation of a semiconductor layer of SI

1996-03-07

1997-12-16

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437100, 437173, 437244, 437DIG148, H01L 2102

Patent

active

056984723

ABSTRACT:
The present invention is directed to a method and device for oxidation of a semiconductor layer of SiC at the surface thereof for forming an insulating surface layer of SiO.sub.2, in which the semiconductor layer is heated and oxygen is fed to the surface of the semiconductor layer for diffusing thereinto and reacting with the SiC in the surface layer while oxidating it to form SiO.sub.2 and C-oxides that diffuse out of the semiconductor layer, wherein the surface of the semiconductor layer is illuminated by vacuum ultraviolet light during at least a phase of the oxidation to improve the quality of the SiO.sub.2 layer formed.

REFERENCES:
patent: 4474829 (1984-10-01), Peters
patent: 5028560 (1991-07-01), Tsukamoto et al.
patent: 5178682 (1993-01-01), Tsukamoto et al.
patent: 5443863 (1995-08-01), Neely et al.
Allen et al., "Vacuum ultraviolet substrate cloning and etching", Solid State Tech., May 1995, pp. 77-80.

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