Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1984-09-12
1986-02-04
Saba, William G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576E, 29572, 148DIG63, 148DIG64, 148DIG80, 148DIG110, 156610, 156613, 156614, 156DIG72, 156DIG82, H01L 21365, H01L 3100
Patent
active
045683972
ABSTRACT:
A method for growing a Group II-VI epitaxial layer on a substrate, said epitaxial layer having an electron mobility greater than 1.5.times.10.sup.5 cm.sup.2 /V-sec at 77.degree. K. and a carrier concentration less than 4.times.10.sup.15 (cm.sup.-3) is described. The method includes the steps of directing a plurality of vapor flows towards the substrate including a Group II metalorganic vapor having a mole fraction in the range of 3.0.times.10.sup.-4 to 4.5.times.10.sup.-4, a Group VI metalorganic vapor having a mole fraction in the range of 2.9.times.10.sup.-3 to 3.5.times.10.sup.-3 and a Group II elemental metal vapor having a mole fraction in the range of 2.6.times.10.sup.-2 to 3.2.times.10.sup.-2. The source of Group II metal is heated to at least 240.degree. C. while radiant energy is directed toward the reactor vessel to warm the zone of the reactor vessel between the Group II metal source and the substrate to at least 240.degree. C. The directed flows of Group II metalorganic vapor, Group VI metalorganic vapor and Group II metal vapor then chemically react to form the epitaxial layer.
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Hoke William E.
Lemonias Peter J.
Traczewski Richard
Maloney Denis G.
Raytheon Company
Saba William G.
Sharkansky Richard M.
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