Metalorganic vapor phase epitaxial growth of group II-VI semicon

Details Metalorganic vapor phase epitaxial growth of group II-VI semicon Metalorganic vapor phase epitaxial growth of group II-VI semicon

1986-04-02

1990-04-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG64, 148DIG110, 156613, 437 88, H01L 2120

Patent

active

049200682

ABSTRACT:
A process to produce one or more Group II-VI epitazial layers over a crystalline substrate by directing flows of one or more Group II components and a Group VI metalorganic vapor to a heated substrate whereby the vapors thereby react to form the epitaxial layer(s), is improved in terms of lower reaction temperatures and higher product quality if, as the Group VI metalorganic vapor source, there is used a tellurium compound of the formula: ##STR1## wherein R.sup.1 and R.sup.2 are, independently, hydrogen or C.sub.1 -C.sub.4 alkyl, preferably, hydrogen.

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W. E. Hoke and P. J. Lemonias, "Metalorganic Growth of CdTe and HgCdTe Epitaxial Films at a Reduced Substrate Temperature Using Diisapropyltelluride", Appl. Phys. Lett., 46(4), 15, Feb. 1985.
Morrison and Boyd, "Organic Chemistry", Allyn and Bacon, Boston, Ma. (Jun. 1980), pp. 102-103, 213-214.

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