Metalorganic chemical vapor deposition of superconducting films

Details Metalorganic chemical vapor deposition of superconducting films Metalorganic chemical vapor deposition of superconducting films

1990-06-22

1993-04-06

Beck, Shrive

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505734, 505730, 427 62, 4272553, 4272552, 4272551, 427314, 427533, 427558, 427585, B05D 306, B05D 512, C23C 1600

Patent

active

052003884

ABSTRACT:
An oxide superconducting film is formed by CVD. The starting material gas sources are Ba(DPM).sub.2, Ba(DPM).sub.2 .multidot.(THF).sub.n or Ba(DPM).sub.2 .multidot.(DMF).sub.n ; Cu(DPM).sub.2, Cu(DPM).sub.2 .multidot.(THF).sub.n or Cu(DPM).sub.2 .multidot.(DMF).sub.n ; and M(DPM).sub.3, M(DPM).sub.3 .multidot.(THF).sub.n or M(DPM).sub.3 .multidot.(DMF).sub.n, where

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Berry et al "Formation of high Tc superconducting films by organometallic chemical vapor deposition" MRS (Reno, Nev.) Apr. 1988, pp. 141-143.
Berg et al, "Fractional Sublimation of various metal chelates of dipvaloylmethane", Anal. Chem. Acta, 60 (Jan. 1972) pp. 117-125.
D. Dijkkamp and T. Venkatesan, "Preparation of Y-Ba-Cu oxide Superconductor thin films using pulsed laser evaporation from high Tc bulk material." Appl. Phys. Lett. 51 (b), Aug. 24, 1987, pp. 619-621.

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