Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-01-07
1978-01-03
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
136 89TF, 156610, 156613, 156614, 148175, 252 623S, 252 623V, 357 4, 357 16, 357 30, 423508, 423509, 427 87, 427 90, 427 91, 427248B, H01L 21205, H01L 2184
Patent
active
040664813
ABSTRACT:
A composite comprising a monocrystalline substrate and one or more layers or films of monocrystalline IVA-VIA compounds and/or alloys formed thereon by a chemical vapor deposition process. The composite is formed at a preferred temperature range of approximately 450.degree.-650.degree. C. The IVA-VIA layer(s) are produced by the pyrolysis of a gas mixture containing metalorganic compounds. Where single crystal metallic oxide substrates of rhombohedral structure, such as sapphire, (.alpha.-Al.sub.2 O.sub.3), or of cubic structure, such as magnesium aluminate (spinel), are used for the growth of monocrystalline lead-containing films such as Pb.sub.1-x Sn.sub.x Te, a nucleation layer of lead is preferably formed on the substrate prior to the pyrolysis of the mixed gaseous reactants.
Using the present process, epitaxial monocrystalline IVA-VIA compounds and/or alloys can be grown on inorganic metal oxide substrates, such as cubic and rhombohedral oxides, on alkali halides and IIA fluorides, and on II-VI and III-V compounds. The compositions of the films can be varied without removing the composites from the deposition apparatus by changing the ratio of the reactant gases and the reaction temperature. The conductivity type (n-type or p-type) of the films also can be controlled without removing the composites from the deposition apparatus by varying the reactant gas compositions and by incorporating a dopant into the reactant mixtures prior to pyrolysis.
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Rolls et al., "Preparation -- Lead-Tin Telluride Photodiodes" Solid-State Electronics, vol. 13, 1970, pp. 75-81.
Manasevit et al., "Use of Metal-Organics --Semiconductor Materials" J. Electrochem. Soc., vol. 116, No. 12, Dec. 1969, pp. 1725-1732.
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Manasevit Harold M.
Simpson William I.
Hamann H. Fredrick
Ochis Robert
Rockwell International Corporation
Rutledge L. Dewayne
Saba W. G.
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