Metalorganic chemical vapor deposition of ferroelectric thin fil

Details Metalorganic chemical vapor deposition of ferroelectric thin fil Metalorganic chemical vapor deposition of ferroelectric thin fil

1992-12-31

1995-07-11

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

4272551, 4272552, 4271263, C23C 1640

Patent

active

054319587

ABSTRACT:
A method to produce high quality doped and undoped lead zirconate titanate (PZT) thin films by metalorganic chemical vapor deposition is disclosed. The PZT thin films with the perovskite structure were deposited on sapphire disks, Pt/Ti/SiO.sub.2 /Si wafers, and RuO.sub.x /SiO.sub.2 /Si wafers by both hot-wall and cold-wall CVD reactors at deposition temperature as low as 550.degree. C. and a reduced pressure 6 torr. The source materials include metalorganic precursors and oxidizing agent. The metalorganic precursors can be metal alkoxides, metal acetylacetonates, or metal .beta.-diketonates. Preferably, the precursors are lead tetramethylheptadione for Pb component, zirconium tetramethylheptadione for Zr component, and titanium ethoxide for Ti component and the oxidizing agent is oxygen. The stoichiometry of the films can be easily controlled by varying the individual precursor temperature and/or the flow rate of the carrier gas. The Pb(Zr.sub.0.82 Ti.sub.0.18)O.sub.3 film produced by the present invention shows a spontaneous polarization of 23.3 .mu.C/cm.sup.2, a remanent polarization of 12.3 .mu.C/cm.sup.2, and coercive field of 64.5 kV/cm.

REFERENCES:
patent: 5006363 (1992-04-01), Fujii et al.
patent: 5104690 (1992-04-01), Greenwald
patent: 5204314 (1993-04-01), Kirlin et al.
Sakashita et al., "Preparation and Electrical Properties of MOCVD-deposited PZT thin films", J. Appl. Phys. 69(12) Jun. 1991, pp. 8352-8357.

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