Metalorganic chemical vapor deposition of (Ba.sub.1-x Sr.sub.x)R

Details Metalorganic chemical vapor deposition of (Ba.sub.1-x Sr.sub.x)R Metalorganic chemical vapor deposition of (Ba.sub.1-x Sr.sub.x)R

1995-07-12

1997-05-13

Dang, Trung

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438396, 438240, H01L 2170

Patent

active

056292295

ABSTRACT:
A dynamic random access memory device having a ferroelectric thin film perovskite (Ba.sub.1-x Sr.sub.x)TiO.sub.3 layer sandwiched by top and bottom (Ba.sub.1-x Sr.sub.x)RuO.sub.3 electrodes. The memory device is made by a MOCVD process including the steps of providing a semiconductor substrate, heating the substrate, exposing the substrate to precursors including at least Ru(C.sub.5 H.sub.5).sub.2, thereafter exposing the substrate to precursors including at least TiO(C.sub.2 H.sub.5).sub.4 and thereafter exposing the substrate to precursors including at least Ru(C.sub.5 H.sub.5).sub.2.

REFERENCES:
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5393352 (1995-02-01), Summerfelt
patent: 5478772 (1995-12-01), Fazan
patent: 5491102 (1996-02-01), Desu et al.
patent: 5504041 (1996-04-01), Summerfelt

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