Organic compounds -- part of the class 532-570 series – Organic compounds – Rare earth containing
Patent
1993-11-12
1996-12-10
Wu, Shean C.
Organic compounds -- part of the class 532-570 series
Organic compounds
Rare earth containing
427124, 4272481, C07F 500, B05D 512, C23C 1600
Patent
active
055832059
ABSTRACT:
A metalorganic chemical vapor deposition (MOCVD) method for depositing an F-series metal onto a semiconductor or other substrate or for incorporating nitrogen as a p-type dopant in Group II-VI semiconductor materials. The MOCVD method utilizes an F-series metal amide or zinc amide composition as the source compound for the F-series metal or nitrogen, respectively. Novel erbium amide and zinc amide compositions are disclosed along with methods for preparing the metal amide compositions.
REFERENCES:
CA113:172252, 1990.
CA110:95441, 1988.
Derwent World Patent Index (WPI) abstract corresponding to EP-A-563557, WPI Acc. No. 93-312997/40, 1993.
Bradley et al., "Low Co-ordination Numbers in Lanthanide and Actinide Compounds. Part 1. The Preparation and Characterization of Tris{bis (trimethylsilyl)-amido}lanthanides", Journal of the Chemical Society (London), Dalton Transactions-Inorganic Chemistry pp. 1021-1023 (1973).
Lappert et al., "Amides of Zinc, Cadium, and Mercury: Synthesis, Physical Properties, and Structures", Metal and Metalloid Amides, Chapter 9, pp. 545-566 (1980).
Shustov et al., "Synthesis and Some Properties of Phenylethynyl Derivatives of Trivalent Lanthanides", Metalloorganicheskaya Khimiya, vol. 3, pp. 624-628 (1990).
Power et al. "Synthesis and Characterization of the Isoelectronic d.sup.10 Species [Cu{N(SiMePh.sub.2).sub.2 }.sub.2 ]-and Zn{N(SiMePh.sub.2).sub.2 }.sub.2 ", Inorganic Chemistry, vol. 30, pp. 5013-5015 (1991).
Rees et al., "Sythesis and X-ray Diffraction Crystal Structure of Zn{N[(C(CH.sub.3).sub.3) (Si(CH.sub.3).sub.3)]}.sub.2, The First Solid-State Characterization of Homoleptic Zinc Amide", Polyhedron, vo. 11, No. 13, pp. 1697-1699 (1992).
Rees et al., "OMVPE Growth of ZnSe Utilizing Zinc Amides as Source Compounds: Relevance to the Production of p-Type Material" Material Research Society Symposium Proceedings, vol. 242, pp. 281-286 (1992).
Rees et al., "Synthesis, Characterization and Evaluation of Zinc-Amides as Potential Dopant Sources for ZnSe OMVPE", Material Research Society Symposium Proceedings, vol. 282, pp. 63-67 (1993).
La Duca et al., "Preparation of Lanthanide Nitrides via Ammonolysis of Molten {(Me.sub.3 Si).sub.2 N}.sub.3 Ln: Onset of Crystallization Catalyzed by LinH.sub.2 and LiCl", Inorganic Chemistry, vol. 31, No. 8, pp. 1311-1313 (1992).
Greenwald et al., "MOCVD Erbium Sources", published in Materials Research Society Symposium Proceedings (1993).
Greenwald et al., "MOCVD Erbium Sources", presented in San Francisco, CA, Apr., 1993.
Spear et al., "Chemical Vapor Deposition in the 21st Century" pp. 39-47 (1993).
W. S. Rees, Jr. et al., "Evaluation of Zn{N[Si(CH.sub.3).sub.3 ].sub.2 }.sub.2 as a p-type Dopant in OMVPE Growth of ZnSe", Journal of Electronic Materials, vol. 21, 1992.
Florida State University
Wu Shean C.
LandOfFree
Metalorganic chemical vapor deposition method for depositing f-s does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metalorganic chemical vapor deposition method for depositing f-s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metalorganic chemical vapor deposition method for depositing f-s will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-424857