Metalorganic chemical vapor deposition method for depositing F-s

Details Metalorganic chemical vapor deposition method for depositing F-s Metalorganic chemical vapor deposition method for depositing F-s

1995-12-29

1998-03-10

Wu, Shean C.

Organic compounds -- part of the class 532-570 series

Organic compounds

Rare earth containing

427124, 4271261, 4272481, 427250, 427252, C07F 500, B05D 512, C23C 1600

Patent

active

057262942

ABSTRACT:
A metalorganic chemical vapor deposition (MOCVD) method for depositing an F-series metal onto a semiconductor or other substrate or for incorporating nitrogen as a p-type dopant in Group II-VI semiconductor materials. The MOCVD method utilizes an F-series metal amide or zinc amide composition as the source compound for the F-series metal or nitrogen, respectively. Novel erbium amide and zinc amide compositions are disclosed along with methods for preparing the metal amide compositions.

REFERENCES:
patent: 5064686 (1991-11-01), McGeary
patent: 5492725 (1996-02-01), Gordon
patent: 5583205 (1996-12-01), Rees, Jr.

Affiliated with

Also associated with

Rating

Metalorganic chemical vapor deposition method for depositing F-s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metalorganic chemical vapor deposition method for depositing F-s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metalorganic chemical vapor deposition method for depositing F-s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-140631