Metalorganic chemical vapor deposition growth of Group II-IV sem

Details Metalorganic chemical vapor deposition growth of Group II-IV sem Metalorganic chemical vapor deposition growth of Group II-IV sem

1988-03-28

1989-02-14

Beck, Shrive

Fishing, trapping, and vermin destroying

437965, 148DIG64, 148DIG110, 4274198, H01L 2120

Patent

active

048046388

ABSTRACT:
A method for growing a Group II-IV epitaxial layer over a substrate is described. The method includes the steps of directing a plurality of vapor flows towards the substrate, including a Group II organic vapor, a Group VI organic vapor, and a Group II elemental mercury vapor. At least one of the Group II organic vapor and Group VI organic vapor has organic groups which sterically repulse the second one of the Group II and Group VI organic vapors or which provide electron transfer to the Group II atom or electron withdrawal from the Group VI atom. With the particular arrangements described, it is believed that substantially independent pyrolsis of the Group II organic vapor is provided over the growth region of the substrate, and accordingly, Group II depletions such as cadmium depletion in the epitaxial films provided over the substrate is substantially reduced.

REFERENCES:
patent: 3725135 (1973-04-01), Hager
patent: 4439267 (1984-03-01), Jackson
patent: 4509997 (1985-04-01), Cockayne
patent: 4524090 (1985-06-01), Bottka
patent: 4533410 (1985-08-01), Ogura
patent: 4566918 (1986-01-01), Irvine
patent: 4568397 (1986-02-01), Hoke
patent: 4650539 (1987-03-01), Irvine et al.
Hoke et al., "Low-Temperature Metalorganic Growth of CdTe and HgTe Films Using Ditertiarybutyltelluride" Appl. Phys. Lett. 48(24), Jun. 1986, pp. 1669-1671.
D. C. Harris et al., "HgTe Films from Photolysis of (t-Butyl)HgTe(t-Butyl)", Materials Letters, vol. 4, No. 8, 9 (Aug. 1986), pp. 370-372.

Affiliated with

Also associated with

Rating

Metalorganic chemical vapor deposition growth of Group II-IV sem does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metalorganic chemical vapor deposition growth of Group II-IV sem, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metalorganic chemical vapor deposition growth of Group II-IV sem will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1365514