Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-12-21
1995-11-28
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257762, 257764, 257772, 257751, 257779, H01L 2348, H01L 2946
Patent
active
054710928
ABSTRACT:
A metallurgical joint structure between two workpieces to be joined by soldering or brazing includes a stress release layer of a low yield point metal, preferably silver, gold, copper, palladium or platinum. The joint structure also includes a juxtaposed barrier layer to prevent the diffusion of a solder element, such as tin, to the stress release layer. Preferred barrier layers are chromium, titanium-tungsten and tantalum. Preferably, the joint includes one or more stress relief layer and associated barrier layer combinations in the joint structure for improved joint reliability.
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P. L. Beaudouin and D. A. Jeannotte, Solderable Contact, Jul. 1970 IBM Technical Disclosure Bulletin vol. 13 No. 2 p. 510.
Chan Chin-Jong
Chang Jei-Wei
Romankiw Lubomyr T.
Feig Philip J.
International Business Machines - Corporation
Limanek Robert P.
Strunck Stephen S.
Williams Alexander Oscar
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