Metallo-organic precursors to titanium nitride

Details Metallo-organic precursors to titanium nitride Metallo-organic precursors to titanium nitride

1992-11-05

1994-07-19

Beck, Shrive

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C23C 1600

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053307933

ABSTRACT:
A titanium tetrahalide is reacted with a primary alkyl or aryl amine to prepare a metallo-organic precursor, which thereafter may be volatilized to form a gaseous chemical vapor deposition precursor to titanium nitride, or may be pyrolyzed to form bulk titanium nitride.

REFERENCES:
patent: 4535000 (1985-08-01), Gordon
Fix et al., "Synthesis of Thin Films by APCVD Using Amido and Imido Titanium (IV) Compounds as Precursors", Chem. Mater., vol. 2, No. 3, 1990 pp. 235-241.
Winter, et al., Journal of the American Chemical Society, vol. 114, No. 3, Jan. 29, 1992, pp. 1095-1097.
Sugiyama, K., et al., Proc. Conf. Chem. Vap, Deposition, Int. Conf. 5th, 1975.
Jekel-Vroegop, et al., J. of Organometallic Chemistry, vol. 286, 1985, pp. 309-315.
Hilton, M. R., Energy Res. Abstr., vol. 13, No. 14, 1988.

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