Metallizing semiconductor devices

Details Metallizing semiconductor devices Metallizing semiconductor devices

1980-10-23

1982-05-04

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 99, 427229, 427252, 4272552, H01L 21285

Patent

active

043282610

ABSTRACT:
Silicon semiconductor devices, e.g. integrated circuits are metallized with a silicon/aluminum alloy by exposure to silane and an aluminum alkyl vapour at an elevated temperature and reduced pressure. The process eliminates the prior hydrogen plasma treatment and subsequent annealing of conventional vacuum deposition of aluminum and provides good step and crack coverage.

REFERENCES:
patent: 3219482 (1965-11-01), Jenkin
patent: 3382568 (1968-05-01), Kuiper
patent: 3413157 (1968-11-01), Kuiper
patent: 3449150 (1969-06-01), Williams et al.
patent: 3620837 (1971-11-01), Leff et al.
patent: 3740835 (1973-06-01), Duncan
patent: 3881242 (1975-05-01), Nuttale
patent: 3918149 (1975-11-01), Roberts

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