Metallizing paste for silicon carbide sintered body and a semico

Details Metallizing paste for silicon carbide sintered body and a semico Metallizing paste for silicon carbide sintered body and a semico

1986-04-24

1988-09-06

Macon, Robert S.

Electricity: conductors and insulators

Feedthrough or bushing

Compression

357 74, 174 52FP, H01L 2348

Patent

active

047696907

ABSTRACT:
The metal powder composition for the metallizing paste is composed of not less than 90 wt % gold, 0.03-3.0 wt % cadmium, 0.1-2.0 wt % bismuth, 0.01-1.0 wt % copper, 0.01-2.0 wt % germanium and 0.01-1.0 wt % silicon.
The metallized paste bonds both the silicon carbide sintered substrate and the silicon semiconductor element with a high bonding strength.

REFERENCES:
patent: 4541003 (1985-09-01), Otsuka et al.
patent: 4577056 (1986-03-01), Butt

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