Metallized vias in polyimide

Details Metallized vias in polyimide Metallized vias in polyimide

1994-12-05

1996-09-03

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257643, 257791, 257792, 257752, 257753, 257773, 257774, 257760, H01L 21465, H01L 21283

Patent

active

055526381

ABSTRACT:
A process for producing a plurality of metallized vias in a polyimide dielectric is disclosed. The process includes depositing a polyimide precursor, then a silane and finally a metal, after patterning the polyimide and silane. The sandwich is heated to completely imidize the polyimide, crosslink the silane and anneal the metal simultaneously. The excess metal overlying the polyimide between the vias is removed by chemical mechanical polishing using the crosslinked silane as a polish stop.

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