Metallization system for semiconductor devices, devices utilizin

Details Metallization system for semiconductor devices, devices utilizin Metallization system for semiconductor devices, devices utilizin

1974-10-16

1976-03-23

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 357 73, B01J 1700

Patent

active

039451119

ABSTRACT:
A metallization system for metallurgically bonding a semiconductor die to metallic conducting slugs as terminals at the same time, and at the same temperature, that a surrounding glass sleeve is hermetically sealed to the conducting slugs for forming a zener diode, for example, is disclosed. The metallization system comprises a combination of aluminum, tin and palladium, for bonding to molybdenum, the aluminum being vapor deposited followed by a vapor co-deposition of aluminum and tin and further followed by a vapor deposited layer of palladium.
A method of making a device is disclosed wherein the die, two metal slugs of molybdenum and a preformed high temperature sealing glass are assembled together and subjected to a time-temperature cycle which includes a rapid rise to a high temperature at which metallurgical bonding of the die to the metal slugs and hermetic sealing of the glass to the metal slugs take place in a short time interval followed by rapid cooling of the assembly to a temperature slightly below the eutectic of aluminum and silicon.

REFERENCES:
patent: 3261075 (1966-07-01), Carman
patent: 3271124 (1966-09-01), Clark
patent: 3447236 (1969-06-01), Hatcher
patent: 3621563 (1971-11-01), Gee
patent: 3657611 (1972-04-01), Yoneda
patent: 3844029 (1974-10-01), Dibugnara

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