Metallization system for semiconductor devices, devices utilizin

Details Metallization system for semiconductor devices, devices utilizin Metallization system for semiconductor devices, devices utilizin

1974-10-16

1976-10-19

Esposito, Michael F.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 89, 427 91, 427123, 427124, 427250, 427255, 427314, 427319, 427320, 357 67, 357 71, B05D 512, H01L 2102

Patent

active

039872173

ABSTRACT:
A metallization system for metallurgically bonding a semiconductor die to metallic conducting slugs as terminals at the same time, and at the same temperature, that a surrounding glass sleeve is hermetically sealed to the conducting slugs for forming a zener diode, for example, is disclosed. The metallization system comprises a combination of aluminum, tin and palladium, for bonding to molybdenum, the aluminum being vapor deposited followed by a vapor co-deposition of aluminum and tin and further followed by a vapor deposited layer of palladium.
A method of making a device is disclosed wherein the die, two metal slugs of molybdenum and a preformed high temperature sealing glass are assembled together and subjected to a time-temperature cycle which includes a rapid rise to a high temperature at which metallurgical bonding of the die to the metal slugs and hermetic sealing of the glass to the metal slugs take place in a short time interval followed by rapid cooling of the assembly to a temperature slightly below the eutectic of aluminum and silicon.

REFERENCES:
patent: 3200310 (1965-08-01), Carman
patent: 3212160 (1965-10-01), Dale et al.
patent: 3518753 (1970-07-01), Heidenreich
patent: 3567509 (1971-03-01), Kuiper
patent: 3616291 (1971-10-01), Wilson
patent: 3657611 (1972-04-01), Yoneda
patent: 3848260 (1974-11-01), Tsunemitsu

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