Patent
1974-01-03
1978-02-28
Larkins, William D.
357 67, 357 73, H01L 2348, H01L 2946
Patent
active
040770451
ABSTRACT:
A metallization system for metallurgically bonding a semiconductor die to metallic conducting slugs as terminals at the same time, and at the same temperature, that a surrounding glass sleeve is hermetically sealed to the conducting slugs for forming a zener diode, for example, is disclosed. The metallization system comprises a combination of aluminum, tin and palladium, for bonding to molybdenum, the aluminum being vapor deposited followed by a vapor co-deposition of aluminum and tin and further followed by a vapor deposited layer of palladium.
A method of making a device is disclosed wherein the die, two metal slugs of molybdenum and a preformed high temperature sealing glass are assembled together and subjected to a time-temperature cycle which includes a rapid rise to a high temperature at which metallurgical bonding of the die to the metal slugs and hermetic sealing of the glass to the metal slugs take place in a short time interval followed by rapid cooling of the assembly to a temperature slightly below the eutectic of aluminum and silicon.
REFERENCES:
patent: 3200310 (1965-08-01), Carman
patent: 3212160 (1965-10-01), Dale et al.
patent: 3518753 (1970-07-01), Heidenreich
patent: 3657611 (1972-04-01), Yoneda
Greeson Richard L.
Philofsky Elliott M.
Fisher John A.
Larkins William D.
Motorola Inc.
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