Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-07-04
2006-07-04
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S748000, C257S773000, C257S774000, C257S762000, C257S758000
Reexamination Certificate
active
07071557
ABSTRACT:
The present invention provides a metallization structure for semiconductor device interconnects such as a conductive line, and methods for making the same, wherein the metallization structure includes a substrate with a substantially planar upper surface, a foundation metal layer disposed on a portion of the substrate upper surface, a primary conducting metal layer overlying the foundation metal layer, and a metal spacer on the sidewalls of the primary conducting metal layer and the foundation metal layer. The present invention also provides a metallization structure and a method for making the same, wherein the metallization structure includes a substrate with a foundation metal layer disposed thereon, a dielectric layer with an aperture therethrough being disposed on the substrate, where the bottom of the aperture exposes the foundation metal layer of the substrate and a metal spacer on the sidewall of the aperture and a line or plug of a primary conducting metal filling the remaining portion of the aperture. These metallization structures are useful for reducing the incidence and severity of thermally induced stress voids.
REFERENCES:
patent: 4619037 (1986-10-01), Taguchi et al.
patent: 4988423 (1991-01-01), Yamamoto et al.
patent: 5275973 (1994-01-01), Gelatos
patent: 5300813 (1994-04-01), Joshi et al.
patent: 5317185 (1994-05-01), Fernandes et al.
patent: 5321211 (1994-06-01), Haslam et al.
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5356659 (1994-10-01), Seshubabu et al.
patent: 5475267 (1995-12-01), Ishii et al.
patent: 5489548 (1996-02-01), Nishioka et al.
patent: 5498889 (1996-03-01), Hayden
patent: 5529954 (1996-06-01), Iijima et al.
patent: 5534463 (1996-07-01), Lee et al.
patent: 5545590 (1996-08-01), Licata
patent: 5578523 (1996-11-01), Fiordalice et al.
patent: 5637527 (1997-06-01), Baek
patent: 5701647 (1997-12-01), Saenger et al.
patent: 5712195 (1998-01-01), Chang
patent: 5770519 (1998-06-01), Klein et al.
patent: 5793057 (1998-08-01), Summerfelt
patent: 5808365 (1998-09-01), Mori
patent: 5825609 (1998-10-01), Andricacos et al.
patent: 5879957 (1999-03-01), Joo
patent: 5903053 (1999-05-01), Iijima et al.
patent: 5913143 (1999-06-01), Harakawa
patent: 5917244 (1999-06-01), Lee et al.
patent: 5937319 (1999-08-01), Xiang et al.
patent: 5960282 (1999-09-01), Chuang
patent: 5985762 (1999-11-01), Geffken et al.
patent: 6020233 (2000-02-01), Kim
patent: 6030896 (2000-02-01), Brown
patent: 6046502 (2000-04-01), Matsuno
patent: 6054380 (2000-04-01), Naik
patent: 6060377 (2000-05-01), Xiang et al.
patent: 6066560 (2000-05-01), Yakura
patent: 6071787 (2000-06-01), Joo
patent: 6074943 (2000-06-01), Brennan et al.
patent: 6133635 (2000-10-01), Bothra et al.
patent: 6140235 (2000-10-01), Yao et al.
patent: 6153900 (2000-11-01), Chang et al.
patent: 6166439 (2000-12-01), Cox
patent: 6180517 (2001-01-01), Liou et al.
patent: 6197682 (2001-03-01), Drynan et al.
patent: 6235626 (2001-05-01), Makino et al.
patent: 6242340 (2001-06-01), Lee
patent: 6255734 (2001-07-01), Liu et al.
patent: 6277745 (2001-08-01), Liu et al.
patent: 6281115 (2001-08-01), Chang et al.
patent: 6285082 (2001-09-01), Joshi et al.
patent: 6307266 (2001-10-01), Yung
patent: 6384438 (2002-05-01), Cho et al.
patent: 6420725 (2002-07-01), Harshfield
patent: 6436816 (2002-08-01), Lee et al.
patent: 6646340 (2003-11-01), Deeter et al.
patent: 6677647 (2004-01-01), Dawson
patent: 2001/0044202 (2001-11-01), Huang et al.
patent: 502647 (1992-09-01), None
patent: 01101671 (1989-04-01), None
Definition of “extent”, Merriam-Webster online Dictionary, 10thedition, www.m-w.com.
Lee Eugene
Micro)n Technology, Inc.
TraskBritt
LandOfFree
Metallization structures for semiconductor device... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metallization structures for semiconductor device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metallization structures for semiconductor device... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3527599