Metallization stack structure to improve electromigration resist

Details Metallization stack structure to improve electromigration resist Metallization stack structure to improve electromigration resist

1999-02-10

2000-02-08

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257762, 257765, 257767, 257770, 257771, 438683, 438685, 438686, 438687, H01L 2348, H01L 2352, H01L 2940

Patent

active

060231009

ABSTRACT:
There is provided an improved metallization stack structure so as to produce a higher electromigration resistance and yet maintain a relatively low resistivity. The metallization stack structure includes a pure copper layer sandwiched between a top thin doped copper layer and a bottom thin doped copper layer. The top and bottom thin doped copper layers produce a higher electromigration resistance. The pure copper layer produces a relatively low resistivity.

REFERENCES:
patent: 5272376 (1993-12-01), Ueno
patent: 5439731 (1995-08-01), Li et al.
patent: 5442235 (1995-08-01), Parrillo et al.
patent: 5461260 (1995-10-01), Varker et al.
patent: 5466638 (1995-11-01), Eguchi
patent: 5506450 (1996-04-01), Lee et al.
patent: 5627101 (1997-05-01), Lin et al.
patent: 5641992 (1997-06-01), Lee et al.
patent: 5659201 (1997-08-01), Wollesen
patent: 5681779 (1997-10-01), Pasch et al.
patent: 5793112 (1998-08-01), Hasegawa et al.
patent: 5859456 (1999-01-01), Efrand et al.

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