Metallization scheme providing adhesion and barrier properties

Chemistry: electrical and wave energy – Processes and products

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204 384, 20419225, 2041923, 357 71, 428620, 437192, H01L 2148, H01L 2128, H01L 21308, C25D 712

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active

049275054

ABSTRACT:
A titanium-tungsten-nitride/titanium-tungsten/gold (TiWN/TiW/Au) packaging interconnect metallization scheme is used to provide electrical contact to chip level interconnect metallization on a semiconductor substrate. The TiWN/TiW/Au packaging interconnect metallization scheme provides for good adhesion and barrier properties that withstand high temperatures and improve the reliability of the semiconductor chip. The TiWN layer provides good adhesion to the chip level interconnect metallization and the passivation layer. It also provides improved barrier properties to prevent the diffusion of other metal atoms through it. The TiW layer provides good adhesion to the gold metal layer. A gold bump may be electroplated to the gold layer and automatically bonded to a conductive lead of a tape in TAB packaging; or a wire bonded to the gold layer in conventional packaging.

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Nowicki et al., Thin Solid Films, vol. 53, pp. 195-205, (1978).

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