Metallization scheme providing adhesion and barrier properties

Details Metallization scheme providing adhesion and barrier properties Metallization scheme providing adhesion and barrier properties

1988-07-05

1989-11-14

Roy, Upendra

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

156652, 156664, 437192, 437194, 437246, 428623, 428626, H01L 2148, H01L 2128, H01L 21308

Patent

active

048807087

ABSTRACT:
A titanium-tungsten-nitride/titanium-tungsten/gold (TiWN/TiW/Au) packaging interconnect metallization scheme is used to provide electrical contact to chip level interconnect metallization on a semiconductor substrate. The TiWN/TiW/Au packaging interconnect metallization scheme provides for good adhesion and barrier properties that withstand high temperatures and improve the reliability of the semiconductor chip. The TiWN layer provides good adhesion to the chip level interconnect metallization and the passivation layer. It also provides improved barrier properties to prevent the diffusion of other metal atoms through it. The TiW layer provides good adhesion to the gold metal layer. A gold bump may be electroplated to the gold layer and automatically bonded to a conductive lead of a tape in TAB packaging; or a wire bonded to the gold layer in conventional packaging.

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Dening et al., Reliability of High Temperature I.sup.2 L Integrated Circuits, IEEE/IRPS, 1984, pp. 30-36.
Meyer et al., Metallurgy of TiW/Au/Cu System for TAB Assembly, J. Vac. Sci. Technol. A3(3), May/Jun. 1985, pp. 772-776.
Nowicki et al., Studies on the Ti-W/Au Metallization on Aluminum, Thin Solid Films, vol. 53, 1978, pp. 195-205.

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