Metallization scheme including a low modulus structure

Details Metallization scheme including a low modulus structure Metallization scheme including a low modulus structure

2007-11-13

2007-11-13

Brewster, William M. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S760000, C257SE23020

Reexamination Certificate

active

11121413

ABSTRACT:
The present invention provides a metallization scheme, a method for manufacturing the metallization scheme, and an integrated circuit including the metallization scheme. In one aspect, the metallization scheme (300) includes a protective layer (320) located over a substrate (310), and a conductive layer (330) located over the protective layer (320). The metallization scheme (300) further includes a stress-reducing low-modulus material (340) located between the protective layer (320) and the conductive layer (330).

REFERENCES:
patent: 6656828 (2003-12-01), Maitani et al.
patent: 6998325 (2006-02-01), Yunogami et al.

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