Metallization processing

Details Metallization processing Metallization processing

1989-10-23

1992-01-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437190, 437245, H01L 2144

Patent

active

050844156

ABSTRACT:
When forming a metallization layer in integrated-circuit semiconductor device fabrication, metal such as tungsten, for example, adheres poorly to dielectrics such as, e.g., silicon oxide, and tends to flake off from wafer areas not covered by a glue layer- such areas typically including the backside and the edge of the wafer, and clip marks on the face of the wafer. The invention prevents flaking by processing including: forming an adhesive or glue layer on the dielectric, forming a metal layer, forming a protective layer on metal on the glue layer, and etching to remove metal not covered by the protective layer.

REFERENCES:
patent: 4404235 (1983-09-01), Tarng et al.
patent: 4845050 (1989-07-01), Kim et al.
"Thin Film Processes", John Vossen et al., 1987.
"Thin Layers of Tin and Al as glue layers for blanket Tun gsten Deposition", 1987, Materials Research Society, pp. 187-195, Rana et al.
"Tungsten on Conducting Nitride Composite Film", IBM Technical Disclosure Bulletin; Aha et al., 8/88, pp. 477-478.

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