Metallization process for good metal step coverage while maintai

Details Metallization process for good metal step coverage while maintai Metallization process for good metal step coverage while maintai

1993-01-08

1993-12-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437199, 437190, 437924, 148DIG102, H01L 2144

Patent

active

052702553

ABSTRACT:
A new method of metallization of an integrated circuit is described. Semiconductor device structures are fabricated in and on a semiconductor substrate. At least one contact opening to the semiconductor substrate and at least one lithography alignment cross mark opening structure are formed. A barrier layer is preferably sputtered within the contact openings and over the semiconductor device structures. A cold aluminum seed layer is sputtered over all surfaces of the contact openings. Next, a hot aluminum flow layer is provided to obtain the desired step coverage of the contact openings. A second cold aluminum layer is then sputtered onto the hot aluminum layer to define the edges of the wide lithography alignment marks while maintaining good contact opening coverage.

REFERENCES:
patent: 4520554 (1985-06-01), Fisher
patent: 4936930 (1990-06-01), Gruber et al.
patent: 4970176 (1990-11-01), Tracy et al.
patent: 4981529 (1991-01-01), Tsujita
patent: 5002902 (1991-03-01), Watanabe
patent: 5106432 (1992-04-01), Matsumoto et al.
patent: 5106781 (1992-04-01), DeVries
patent: 5108951 (1992-04-01), Chen et al.
patent: 5175125 (1992-12-01), Wong
H. Ono et al. "Development of a Planarized Al-Si Contact Filling Technology", IEEE VMIC Conference Proceedings, Jun. 1990, pp. 76-82.
F. S. Chen et al "Planarized Aluminum Metallization For Sub-0.5 micron CMOS Technology", IEDM 90, pp. 51-53.
C. S. Park et al "Al-PLAPH (Aluminum-Planarization By Post Heating) Process For Planarized Double Metal CMOS Applications", IEEE VMIC Conference Proceedings, Jun. 1990, pp. 326-328.

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