Metallization process for an integrated circuit

Details Metallization process for an integrated circuit Metallization process for an integrated circuit

1988-10-06

1990-01-30

Morgenstern, Norman

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

4271261, 4272552, 4272554, 437190, 437192, 437200, 437202, B05D 512, H01L 21285

Patent

active

048972878

ABSTRACT:
A simple method for forming a metallization for an integrated circuit comprises depositing on a silicon substrate a first layer of refractory metal and nitrogen solid mixture and depositing thereon a second layer of refractory metal. The resulting structure is heated to convert the first layer to refractory metal nitride and the second layer to refractory metal silicide by flow of silicon from the substrate. By appropriate masking of the substrate, formation of silicide in the second layer can be blocked, thus permitting formation of self-aligned metallization by selective etching.

REFERENCES:
patent: 4640004 (1987-03-01), Thomas et al.

Affiliated with

Also associated with

Rating

Metallization process for an integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metallization process for an integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metallization process for an integrated circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1922913