Metallization plant

Details Metallization plant Metallization plant

1982-06-15

1984-12-18

Smith, John D.

Coating apparatus

Control means responsive to a randomly occurring sensed...

Temperature responsive

118666, 118688, 118726, 118719, 118725, 118692, 62 555, C23C 1308

Patent

active

044885067

ABSTRACT:
An apparatus for depositing metal or alloy films by a thermal decomposition process on a substrate includes a furnace having a number of selectively heated zones. The temperature of each zone is controllable so as to provide compensation for changes in the concentration of reactant materials in the different regions of the furnace. Means are provided for the safe handling of highly pyrophoric organometallic reactants. The apparatus may be used for the deposition of aluminium/silicon alloy films on semiconductor wafers in the manufacture of integrated circuits.

REFERENCES:
patent: 2916593 (1959-12-01), Herrick
patent: 3160517 (1964-12-01), Jenkin
patent: 3206325 (1965-09-01), Auerbach
patent: 3637422 (1972-01-01), Landingham et al.
patent: 3791158 (1974-02-01), Tempelmeyer
patent: 4328261 (1982-05-01), Heinecke et al.
Chappelow et al., "Controlling (Reaction) Pressure in CVD Tools", IBM. Technical Disclosure Bulletin, vol. 18, No. 7, Dec. 1975, pp. 2082-2083.

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