Fishing – trapping – and vermin destroying
Patent
1993-05-26
1995-04-18
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437245, H01L 2144
Patent
active
054078610
ABSTRACT:
A plug contact process wherein, after contact holes are etched, an adhesion layer (such as Ti/TiN) and a filler metal (such as tungsten) are deposited overall. A two-stage etch is then used: First, the filler metal is etched preferentially with respect to the adhesion layer, until an endpoint signal first indicates that said adhesion layer is exposed. No overetch is used at this stage. Thereafter a nonpreferential etch is used to clear residues of the filler metal, while also uniformly reducing the height of the adhesion layer. This prevents the tops of the plugs in the contact holes from being recessed. Aluminum (or other metal) is then deposited and patterned (using a stack etch to remove the undesired portions of the adhesion layer too) to implement the desired wiring pattern. This process thereby reduces voids, and resulting metallization defects, in a process with high-aspect-ratio contacts. In addition, the residual adhesion layer helps to reduce electromigration.
REFERENCES:
patent: 4980018 (1990-12-01), Mu et al.
patent: 5164330 (1992-11-01), Davis et al.
patent: 5227337 (1993-07-01), Kadomura
IEEE Transactions on Semiconductor Manufacturing, vol. 3, No. 4, Nov., 1990, pp. 150-157 Paul Riley et al., `Implementation of Tungsten Metallization in Multilevel Interconnection Technologies`.
Extended Abstracts, vol. 90-1, No. 165, 1990, Princeton, N.J., pp. 248-249. J. Theisen et al., `Maskless Tungsten Etch Process for Plug Fill`.
Patent Abstracts of Japan, vol. 16, No. 300 (E-1227), Jul. 2, 1992, "Manufacture of Semiconductor Device", Kogumi Tailchi, et al.
Desanti Giorgio
Marangon Maria S.
Marmiroli Andrea
Chaudhuri Olik
Everhart C.
Groover Robert
SGS-Thomson Microelectronics S.R.L.
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