Metallization of selectively implanted A.sub.III -B.sub.V compou

Details Metallization of selectively implanted A.sub.III -B.sub.V compou Metallization of selectively implanted A.sub.III -B.sub.V compou

1981-02-11

1983-03-22

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 148187, 357 15, 357 91, 427 88, H01L 2948, H01L 2956, H01L 21265

Patent

active

043770304

ABSTRACT:
Fabricating a semiconductor arrangement with a semiconductor body of an A.sub.III -B.sub.V compound, characterized that the semiconductor body is doped with different doping substances in such manner that for barrier and non-barrier contacts on different zones doped with these doping substances only one metallization is required.

REFERENCES:
patent: 4089020 (1978-05-01), Ikeda
patent: 4096622 (1978-06-01), McIver
patent: 4173063 (1979-11-01), Kniepkamp
patent: 4188710 (1980-02-01), Davey et al.
patent: 4196439 (1980-04-01), Niehaus et al.
patent: 4213840 (1980-07-01), Omori et al.
patent: 4265934 (1981-05-01), Ladd, Jr.
patent: 4272561 (1981-06-01), Rothman et al.
patent: 4301188 (1981-11-01), Niehaus
Dean et al., IEEE-Trans. Electron Devices, Jun. 1975, pp. 358-360.
Jaros et al., Solid St. Electronics, 18, (1975), 1029.
Kung et al., Electronics Letts., 13, (1977), 187-188.
Long et al., J. Vac. Sci. Tech., 19, (Oct. 1981), 531.

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