Metallization of buried contact solar cells

Details Metallization of buried contact solar cells Metallization of buried contact solar cells

1998-04-17

2000-12-19

Mulpuri, Savitri

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 98, 438 71, H01L 3118

Patent

active

061626589

ABSTRACT:
The present invention makes use of geometry of grooves formed in a substrate, to allow a dielectric layer to be deposited with some regions of the grooves having a substantially thinner layer deposited than top surfaces of the substrate. These regions of reduced thickness dielectric within the grooves are then prematurely etched by an appropriate chemical, or other, etchant capable of controllably etching away the dielectric layer, with the result that in these regions the silicon surface can be exposed and plated by a metallization while the top surface remains protected by the dielectric material. The remaining dielectric material can optionally be required to act as an anti-reflective coating. The invention is applicable in making buried contact solar cells.

REFERENCES:
patent: 4726850 (1988-02-01), Wenham et al.
patent: 4855017 (1989-08-01), Douglas
patent: 5081049 (1992-01-01), Green et al.

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