Stock material or miscellaneous articles – Composite – Of silicon containing
Patent
1984-09-20
1986-07-15
Lesmes, George F.
Stock material or miscellaneous articles
Composite
Of silicon containing
428901, 428666, B32B 1500, B32B 906, C25D 510, C25D 526
Patent
active
046006583
ABSTRACT:
Semiconductor devices with resistor regions, capable of operating at higher temperatures, and having improved bond pull strength are obtained by using a single layer (e.g. Ni--Cr) to act as a combined resistive layer and barrier layer. When placed in the contact windows between the semiconductor (e.g. Si) and the interconnect metallization, (e.g. Al) the Ni--Cr layer acts as a diffusion barrier to prevent interdiffusion of silicon and aluminum and contact alloying punch-through. When placed elsewhere on the device the Ni--Cr layer also serves as thin film resistor material. Wire bond pull strength is improved by placing an adhesion layer (e.g. polysilicon) beneath the portion of the resistive barrier layer underlying the bonding pads. The polysilicon layer rests on the insulator (e.g. SiO.sub.2) covering the semiconductor substrate.
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Anderson George F.
Burt Dan L.
Handy Robert M.
Lesmes George F.
Motorola Inc.
Swisher Nancy A. B.
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