Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1993-10-04
1994-10-18
Beck, Shrive
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427253, 4272551, 4273835, 437192, 437194, 437213, 437223, 437224, C23C 1600
Patent
active
053566599
ABSTRACT:
A low temperature chemical vapor deposition process is used to encapsulate aluminum conductors on the surface of a silicon substrate to form bimetallic conductors. The refractory material is desirably tungsten.
REFERENCES:
patent: 3585461 (1971-06-01), Eynon
patent: 3785862 (1974-01-01), Grill
patent: 4005452 (1977-01-01), Cook
patent: 4048649 (1977-09-01), Bohn
patent: 4120706 (1978-10-01), Mason
patent: 4158613 (1979-06-01), Sogo
patent: 4161430 (1979-07-01), Sogo
patent: 4263058 (1981-04-01), Brown
patent: 4271424 (1981-06-01), Inayoshi
patent: 4310567 (1982-01-01), Tabata
patent: 4404235 (1983-09-01), Tarng
patent: 4438450 (1984-03-01), Sheng
patent: 4517225 (1985-05-01), Broadbent
patent: 4531144 (1985-07-01), Holmberg
patent: 4532702 (1985-08-01), Gigante
patent: 4592802 (1986-06-01), Deleonibus
patent: 4595608 (1986-06-01), King
patent: 4617087 (1986-10-01), Iyer
patent: 4619840 (1986-10-01), Goldman
patent: 4619887 (1986-10-01), Hooper
patent: 4629635 (1986-12-01), Brors
patent: 4742014 (1988-05-01), Hooper
patent: 4843453 (1989-06-01), Hooper
Shiono Y "Method for Producing a Semiconductor Device" English Translation of Japanese Patent 157237 (Aug. 1985).
Eliot K. Broadbent et al. "Selective Tungsten Processing by Low Pressure CVD" Solid State Technology Dec. 1985, p. 51-59.
H. Exrol, H. S. Lehmen, F. Turene and R. Valletta "Molybdenum Deposition Process" IBM Technical Disclosure Bulletin, vol. 13, No. 5, Oct. 1970 p. 1298.
J. M. Shaw and J. A. Amick "Vapor-Deposited Tungsten as a Metallization and Interconnection Material for Silicon Device" RCA Review vol. 31, No. 2, Jun. 1970 pp. 306-316.
Hey Hans P. W.
Seshubabu Desu
Sinha Ashok K.
AT&T Bell Laboratories
Beck Shrive
Dang Vi Duong
Fox James H.
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