Metallization for integrated devices

Details Metallization for integrated devices Metallization for integrated devices

1987-06-03

1989-07-25

James, Andrew J.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 71, 4271265, 420462, H01L 2348, H01L 2946

Patent

active

048518956

ABSTRACT:
Metallization of integrated devices using ruthenium as a metallization material results in well-adhering contacts to source and drain regions as well as to gate oxide. Ruthenium is similarly suited as a diffusion barrier metallization between, e.g., silicon and aluminum and as an interconnection metallization material. And, as a diffusion barrier material, ruthenium dioxide may be used.

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CRC Handbook of Chem. and Phys., 57th Ed., 1976-1977, p. B-153, Cleveland, OH.
Murarka, J. Vac. Sci. Technol., 17(4), Jul./Aug. 1980, "Refractory Silicides for Integrated Circuits", pp. 775-792.
IBM Technical Disclosure Bulletin, "Transition Metal Oxide Conductors in Integrated Circuits", vol. 20, Apr. 1978, by J. A. Armstrong et al., p. 4633.

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