Metallic thin flim and method of manufacturing the same, and sur

Details Metallic thin flim and method of manufacturing the same, and sur Metallic thin flim and method of manufacturing the same, and sur

1997-01-21

2000-03-07

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Using an energy beam or field, a particle beam or field, or...

117109, 117938, 20419217, C30B 2308

Patent

active

060334711

ABSTRACT:
By using a dual ion-beam sputtering apparatus, an aluminum thin-film is formed on a glass substrate made of an amorphous material. While radiating an ion beam for assisting the film formation from an ion source onto the glass substrate, the aluminum thin-film is formed by depositing the sputtering ions which are generated by radiating an ion beam onto an aluminum target.

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patent: 5449641 (1995-09-01), Maeda
patent: 5558711 (1996-09-01), Sakurai
patent: 5711858 (1998-01-01), Kontra et al.
patent: 5747360 (1998-05-01), Nulman
1046 Journal of the Electrochemical Society 138(1991) Apr., No. 4, Manchester, NH, US.

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